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| 15 10V 3V 12 4.5V 10 8 Vds=5V 25C 125C Id (A) 2.5V 6 Id (A) 4 5 9 6 4 3 Vgs=2V 2 0 0 1 2 3 Vds (Volts) Fig 1: On-Region Characteristics 150 0 0 0.5 1 1.5 2 2.5 3 3.5 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 125 Vgs=2.5V 1.6 Vgs=4.5V Vgs=10V Rds(on) (m:) 100 75 50 Vgs=10V 25 0 0 2 4 6 8 10 Vgs=4.5V 1.4 1.2 Vgs=2.5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 1.0E+01 1.0E+00 150 Id=2A 1.0E-01 Rds(on) (m:) Is (A) 125C 1.0E-02 1.0E-03 100 125C 50 25C 1.0E-04 25C 0 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=15V Id=3.4A 4 Capacitance (pF) Vgs (Volts) 600 500 Ciss 400 300 200 100 0 0 1 2 3 4 5 6 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics Vds (Volts) Figure 8: Capacitance Characteristics Coss Crss 3 2 1 0 100.0 Tj(max.)=150C Ta=25C Rds(on) limited 10Ps 100Ps 1ms 0.1s 10ms Power (W) 20 Tj(max.)=150C Ta=25C 15 Id (Amps) 10.0 10 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z Tja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 20 -10V 15 -5V -4.5V -4V 10 Vds=-5V 8 25C -Id (A) 10 -3V 5 -2.5V -Id (A) Vgs=-3.5V 6 125C 4 2 -2V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 250 225 200 Vgs=-2.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Vgs=-4.5V, Vgs=-10V 1.4 Vgs=-2.5V 1.2 Id=-2A 1 Rds(on) (m:) 175 150 125 100 75 50 0 1 2 3 4 5 6 Vgs=-10V Vgs=-4.5V 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 Id=-2A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) -Is (A) 200 150 100 50 0 0 2 4 6 125C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 25C 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-15V Id=-2.0A 4 Capacitance (pF) -Vgs (Volts) 600 500 400 300 200 100 0 0 1 2 3 4 5 6 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics Coss Crss 3 Ciss 2 1 0 100.0 Tj(max.)=150C Ta=25C 10Ps -Id (Amps) Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms Power (W) 10.0 100Ps 1ms 20 Tj(max.)=150C Ta=25C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z Tja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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